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| Bulletin I25167 rev. C 03/03 ST110S SERIES PHASE CONTROL THYRISTORS Stud Version Features Center gate Hermetic metal case with ceramic insulator (Glass-metal seal over 1200V) International standard case TO-209AC (TO-94) Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling 110A Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz It 2 ST110S 110 90 175 2700 2830 36.4 33.2 400 to 1600 Units A C A A A KA2s KA2s V s C @ 50Hz @ 60Hz V DRM /V RRM tq TJ typical 100 - 40 to 125 case style TO-209AC (TO-94) www.irf.com 1 ST110S Series Bulletin I25167 rev. C 03/03 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code 04 ST110S 08 12 16 V DRM/V RRM, max. repetitive peak and off-state voltage V 400 800 1200 1600 VRSM , maximum nonrepetitive peak voltage V 500 900 1300 1700 I DRM/I RRM max. @ TJ = TJ max mA 20 On-state Conduction Parameter I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current ST110S 110 90 175 2700 2830 2270 2380 Units Conditions A C A DC @ 85C case temperature t = 10ms t = 8.3ms A t = 10ms t = 8.3ms t = 10ms KA2 s t = 8.3ms t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. 180 conduction, half sine wave I2t Maximum I2t for fusing 36.4 33.2 25.8 23.5 I 2t Maximum I2t for fusing 364 0.90 t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 V TM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current V 0.92 (I > x IT(AV)),TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. m 1.81 1.52 600 mA 1000 T J = 25C, anode supply 12V resistive load V (I > x IT(AV)),TJ = TJ max. Ipk= 350A, TJ = TJ max, tp = 10ms sine pulse 1.79 Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current td tq Typical delay time Typical turn-off time 500 2.0 s 100 A/s ST110S Units Conditions Gate drive 20V, 20, tr 1s TJ = TJ max, anode voltage 80% VDRM Gate current 1A, di g/dt = 1A/s Vd = 0.67% VDRM, TJ = 25C ITM = 100A, TJ = TJ max, di/dt = 10A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, tp = 500s 2 www.irf.com ST110S Series Bulletin I25167 rev. C 03/03 Blocking Parameter dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current ST110S 500 20 Units Conditions V/s mA TJ = TJ max. linear to 80% rated VDRM TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM IGM +VGM -VGM Maximum peak gate power ST110S 5 1 2.0 20 Units Conditions W A TJ = TJ max, t p 5ms TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t p 5ms PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage TYP. IGT DC gate current required to trigger 180 90 40 VGT DC gate voltage required to trigger 2.9 1.8 1.2 IGD VGD DC gate current not to trigger DC gate voltage not to trigger V 5.0 MAX. 150 3.0 10 0.25 mA V V mA TJ = TJ max, tp 5ms TJ = - 40C TJ = 25C TJ = 125C TJ = - 40C TJ = 25C TJ = 125C Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = TJ max Thermal and Mechanical Specification Parameter TJ Tstg Max. operating temperature range Max. storage temperature range ST110S -40 to 125 -40 to 150 0.195 Units Conditions C RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, 10% DC operation K/W 0.08 15.5 (137) 14 (120) Mounting surface, smooth, flat and greased Non lubricated threads Nm (lbf-in) Lubricated threads wt Approximate weight Case style 130 g See Outline Table TO - 209AC (TO-94) www.irf.com 3 ST110S Series Bulletin I25167 rev. C 03/03 RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle 180 120 90 60 30 Sinusoidal conduction Rectangular conduction Units 0.035 0.041 0.052 0.076 0.126 0.025 0.042 0.056 0.079 0.127 K/W Conditions T J = T J max. Ordering Information Table Device Code ST 1 11 2 0 3 S 4 16 5 P 6 0 7 V 8 1 2 3 4 5 6 7 - Thyristor Essential part number 0 = Converter grade S = Compression bonding Stud Voltage code: Code x 100 = VRRM (See Voltage Rating Table) P = Stud base 1/2"-20UNF-2A threads 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) 8 - V = Glass-metal seal (only up to 1200V) None = Ceramic housing (over 1200V) 4 www.irf.com ST110S Series Bulletin I25167 rev. C 03/03 Outline Table GLASS METAL SEAL 16.5 (0.65) MAX. 8.5 (0.33) DIA. 4.3 (0.17) DIA 37 ) 9.5 ( 0. MI N . 2.6 (0.10) MAX. (.025 s.i.) RED SILICON RUBBER 170 (6.69) 157 (6.18) RED CATHODE WHITE GATE C.S. 0.4 mm (.0006 s.i.) 2 20 C.S. 16mm 2 ( 0. 79 FLEXIBLE LEAD )M IN . Fast-on Terminals AMP. 280000-1 REF-250 70 (2.75) MIN. 215 (8.46) RED SHRINK 29 (1.14) MAX. WHITE SHRINK 12.5 (0.49) MAX. 10 (0.39) 23.5 (0.93) MAX. DIA. 21 (0.83) MAX. SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX. Case Style TO-209AC (TO-94) All dimensions in millimeters (inches) CERAMIC HOUSING 16.5 (0.65) MAX. 37 )M IN (0 . 9 .5 8.5 (0.33) DIA. 4.3 (0.17) DIA 2.6 (0.10) MAX. RED SILICON RUBBER 157 (6.18) 170 (6.69) RED CATHODE C.S. 0.4 mm 2 (.0006 s.i.) C.S. 16mm 2 (.025 s.i.) WHITE GATE 215 (8.46) 70 (2.75) MIN. RED SHRINK 29 (1.14) MAX. WHITE SHRINK 10 (0.39) 22.5 (0.88) MAX. DIA. 12.5 (0.49) MAX. 21 (0.83) MAX. SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX. 20 ( 0. FLEXIBLE LEAD 79 )M IN . . www.irf.com 5 ST110S Series Bulletin I25167 rev. C 03/03 Maximum Allowable Cas T e emperature (C) Maximum Allowable Case Temperature (C) 130 S 110S S T eries RthJC (DC) = 0.195 K/ W 120 130 S 110SS T eries RthJC (DC) = 1.95 K/ W 120 110 Conduction Angle 110 Conduction Period 100 100 30 60 90 30 60 90 90 120 180 0 20 DC 90 120 180 120 80 0 20 40 60 80 100 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 80 40 60 80 100 120 140 160 180 Average On-s tate Current (A) Fig. 2 - Current Ratings Characteristics Maximum Average On-state Power Los (W) s 160 140 120 100 80 180 120 90 60 30 RMSLimit S R th 2 0. 0. 4 K/ W 0. 5 K/ W 0. 6 K/ W 3 0. W K/ W K/ A W K/ .1 =0 e lt -D 0.8 K/ W 1K /W 1.2 K/ W a R 60 Conduction Angle 40 20 0 0 20 40 60 80 100 120 25 S 110SS T eries TJ = 125C 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient T emperature (C) Fig. 3 - On-state Power Loss Characteristics Maximum Average On-state Power Los (W) s 220 200 180 160 140 120 100 RMSLimit 80 Conduction Period DC 180 120 90 60 30 A hS Rt 2 0. W K/ = 0. 3 1 0. K/ W W K/ K/ W 0.5 K/ W 0.6 K/ W 0.8 K/ W 1K /W 0.4 ta el -D R 60 40 20 0 1.2 K/ W S 110SS T eries T = 125C J 0 20 40 60 80 100 120 140 160 180 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient T emperature (C) Fig. 4 - On-state Power Loss Characteristics 6 www.irf.com ST110S Series Bulletin I25167 rev. C 03/03 Peak Half S Wave On-state Current (A) ine Peak Half S Wave On-state Current (A) ine 2400 2200 2000 1800 1600 1400 1200 1000 1 At Any R ated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 125C J @60 Hz 0.0083 s @50 Hz 0.0100 s 2800 2600 Maximum Non Repetitive S urge Current Versus Pulse T rain Duration. Control Of Conduction May Not Be Maintained. 2400 Initial T = 125C J No Voltage Reapplied 2200 Rated VRRMReapplied 2000 1800 1600 1400 1200 1000 0.01 S 110S S T eries 0.1 1 10 S 110S S T eries 10 100 Number Of Equa l Amplitude Half Cycle Current Pulses (N) Pulse T rain Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current 10000 Instantaneous On-state Current (A) 1000 100 Tj = 25C Tj = 125C ST110S Series 10 0.5 1.5 2.5 3.5 4.5 Instantaneous On-state Voltage (V) Fig. 7 - On-state Voltage Drop Characteristics T ransient T hermal Impedanc e Z thJC (K/ W) 1 S teady S tate Value R thJC = 0.195 K/ W (DC Operation) 0.1 0.01 S 110SS T eries 0.001 0.001 0.01 0.1 S quare Wave Pulse Duration (s) 1 10 Fig. 8 - Thermal Impedance ZthJC Characteristic www.irf.com 7 ST110S Series Bulletin I25167 rev. C 03/03 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 s b) R ommended load line for ec <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s (b) T j=-40 C (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a) tp tp tp tp = 4ms = 2ms = 1ms = 0.66ms T j=25 C T j=125 C 1 VGD IGD 0.1 0.001 0.01 (1) (2) (3) (4) Device: S 110SS T eries 0.1 1 Frequenc y Limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03/03 8 www.irf.com |
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